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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors S2055 DESCRIPTION With TO-3P(H)IS package High voltage ,high speed Low collector saturation voltage Built-in damper diode APPLICATIONS Color TV horizontal output applications Color TV switching regulator applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 125 150 -55~150 ae ae UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. S2055 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH 700 V VCE(sat) Collector-emitter saturation voltage IC=4.5A ;IB=1.0A 5.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ;IB=1.0A 1.2 V ICBO Collector cut-off current VCB=1500V; VBE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=4.5A ; VCE=5V 4.5 9 COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF fT Transition frequency IC=0.1A ; VCE=10V 2 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2055 Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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